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TC58NS256BDC - 256 MBit CMOS NAND EPROM

TC58NS256BDC Description

TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT (32M × 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia DE.
) The TC58NS256B is a single 3.

TC58NS256BDC Features

* Organization Memory cell array 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and D

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256 MBit CMOS NAND EPROM Toshiba
Toshiba TC58NS256BDC-like datasheet