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TC58NS100DC - 1 GBit CMOS NAND EPROM

TC58NS100DC Description

TC58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT (128M × 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia DES.
) The TC58NS100 is a single 3.

TC58NS100DC Features

* Organization Memory cell array 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and

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GBit CMOS NAND EPROM Toshiba
Toshiba TC58NS100DC-like datasheet