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TC58NS100DC

1 GBit CMOS NAND EPROM

TC58NS100DC Features

* Organization Memory cell array 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and

TC58NS100DC General Description

) The TC58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the regist.

TC58NS100DC Datasheet (526.45 KB)

Preview of TC58NS100DC PDF

Datasheet Details

Part number:

TC58NS100DC

Manufacturer:

Toshiba ↗

File Size:

526.45 KB

Description:

1 gbit cmos nand eprom.
TC58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT (128M × 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia DES.

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TAGS

TC58NS100DC GBit CMOS NAND EPROM Toshiba

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