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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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CY7C1305BV18 CY7C1307BV18 18-Mbit Burst of 4 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and

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HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general pu

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INTEGRATED CIRCUITS DATA SHEET SAA4956TJ 2.9-Mbit field memory with noise reduction Preliminary specification File under Integrated Circuits, IC02 19

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TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The

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4-MBIT (256K X 16 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 28F400BX-T B 28F004BX-T B Y x8 x16 Input Output Architecture 28F400BX-T 28F400BX-B For Hi

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25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

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IC41C44002A/IC41C44002AS(L) IC41LV44002A/IC41LV44002AS(L) Document Title 4Mx4 bit Dynamic RAM with EDO Page Mode Revision History Revision No 0A His

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www.DataSheet4U.com PREMILINARY CY7C1302DV25 9-Mbit Burst of Two Pipelined SRAMs with QDR™ Architecture Features • Separate independent Read and Wr

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CY7C1217F www.DataSheet4U.com 1-Mbit (32K x 36) Flow-Through Sync SRAM Features • 32K x 36 common I/O • 3.3V –5% and +10% core power supply (VDD) • 3

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CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th

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K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC

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MJ1445 PCM SYNCHRONISING WORD RECEIVER MJ1445 2 MBIT PCM SIGNALLING CIRCUIT The 2.048 Mbit PCM signalling circuits comprise a group of circuits whic

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SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial

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A Microchip Technology Company 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet The SST39WF800B is a 512K x16 CMOS Multi-Purpose Flash (MPF)

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SST25WF080B 8 Mbit 1.8V SPI Serial Flash Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - SPI Compa

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Obsolete Device Please use SST25VF080B SST25PF080B 8 Mbit 2.3-3.6V SPI Serial Flash Features • Single Voltage Read and Write Operations - 2.3-3.6V •

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HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

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E PRELIMINARY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004

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