TOSHIBA Datasheet | Specifications & PDF Download

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output App

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TB2929HQ TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929HQ 45W × 4-ch BTL Audio Power IC The TB2929HQ is a four-channel BTL power

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (mi

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Appl

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TLP785,TLP785F TOSHIBA Photocoupler IRED & Photo−Transistor TLP785, TLP785F Office Equipment Home Electric Appliances Solid-State Relays Switching Po

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S

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Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source O

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • Low drain-source ON resistan

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TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE  E-Bike  Low drain−source ON resistance : RDS (ON) =

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications 2SC4793 Unit: mm • High trans

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2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON-resistanc

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TA8403K TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8403K POWER AMPLIFIER FOR DRIVING A DEFLECTION CIRCUIT OF A COLOR TELEVISION TA

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