256-MBIT Datasheet | Specifications & PDF Download

CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

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CY7C1010DV33 2-Mbit (256 K × 8) Static RAM 2-Mbit (256 K × 8) Static RAM Features ■ Pin and function compatible with CY7C1010CV33 ■ High speed ❐ tAA

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IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D www.DataSheet4U.com 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock f

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IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D www.DataSheet4U.com 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock f

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www.DataSheet.co.kr PRELIMINARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Re

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CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM w

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IS42R83200D, IS42R16160D IS45R83200D, IS45R16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM MARCH 2010 FEATURES • Clock frequency: 133, 10

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IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY 2009 FEATURES •

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CY15B102QN CY15V102QN Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM

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CY7C1352F 4-Mbit (256Kx18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally

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CY7C2563XV18/CY7C2565XV18 72-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ Xtreme SRAM Fo

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November 2007 www.DataSheet4U.com HYB18T C25680 0 AF HYB18T C25616 0 AF HYI18TC256800AF HYI18TC256160AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDR

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CY7C1034DV33 6-Mbit (256K X 24) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at f = 100 MHz ■ Low CMOS standby po

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CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit)

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CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM w

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CY7C106D CY7C1006D 1-Mbit (256 K × 4) Static RAM 1-Mbit (256 K × 4) Static RAM Features ■ Pin- and function-compatible with CY7C106B/CY7C1006B ■ High

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www.DataSheet4U.com Data Sheet, Rev. 1.30, Nov. 2005 HYB25DC256160C[E/F/T] HYB25DC256800C[E/F] 256 Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Comp

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CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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