256-MBIT Datasheet | Specifications & PDF Download

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to

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M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRA

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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S70FL256P 256-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus Data Sheet S70FL256P Cover Sheet Notice t

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K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to

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K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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www.DataSheet4U.com 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M (8Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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CY62146EV30 MoBL® 4-Mbit (256K x 16) Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62146DV30

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MOSEL VITELIC V58C2256(804/404/164)S HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mb

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M58BF008 8 Mbit (256Kb x32, Burst) Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = 5V Supply Voltage – VDDQ = 3.3V Input/Output Supply Voltage

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PRELIMINARY CY14B104L, CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14B104L/

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M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS F

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M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS F

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at

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