256-MBIT Datasheet | Specifications & PDF Download

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n

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IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

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Data Sheet, Rev. 1.30, July 2005 www.DataSheet4U.com HYB18T256161AF–22/25/28/33 HYB18T256161AFL25/28/33 256-Mbit x16 GDDR2 DRAM RoHS compliant Mem

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CY7C1010DV33 2-Mbit (256 K × 8) Static RAM 2-Mbit (256 K × 8) Static RAM Features ■ Pin and function compatible with CY7C1010CV33 ■ High speed ❐ tAA

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NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES

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CY7C1041G CY7C1041GE 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Corr

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CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY 2009 FEATURES •

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at

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IS41C16257A IS41LV16257A 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES • • • • • • Fast access and cycle time TTL compatible inputs and

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M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in Read operation ■ Access time: 55ns ■ Low power consumption:

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IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D www.DataSheet4U.com 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock f

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CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit)

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NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES

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K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC

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