CY62146G Datasheet - Cypress

CY62146G, 4-Mbit (256K words x 16 bit) Static RAM

CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit).
CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

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Datasheet Details

Part number:

CY62146G

Manufacturer:

Cypress

File Size:

578.01 KB

Description:

4-Mbit (256K words x 16 bit) Static RAM

Features

* High speed: 45 ns/55 ns
* Ultra-low standby power
* Typical standby current: 3.5 A
* Maximum standby current: 8.7 A
* Embedded ECC for single-bit error correction[1]
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
* 1.0-V data retention
* TTL

CY62146G Distributors

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CY62146G 4-Mbit 256K words bit Static RAM Cypress

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