CY62146G - 4-Mbit (256K words x 16 bit) Static RAM
CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
Both devices are offered in single and dual chip enable options and in multiple pin configurations.
The CY62146GE/CY62146GESL device includes an ERR pin that signals an error-dete
CY62146G Features
* High speed: 45 ns/55 ns
* Ultra-low standby power
* Typical standby current: 3.5 A
* Maximum standby current: 8.7 A
* Embedded ECC for single-bit error correction[1]
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
* 1.0-V data retention
* TTL
