.
EDJ4216EFBG - 256M words x 16 bits 4G bits DDR3L SDRAM
COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b.GM71CS17400C - 4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
GM71C(S)17400C/CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C(S)17400C/CL is the new generation dynamic RAM organized 4,194,304 wo.GM71CS17400CL - 4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
GM71C(S)17400C/CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C(S)17400C/CL is the new generation dynamic RAM organized 4,194,304 wo.LC33832M - 256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp.CY7C1069G - 16-Mbit (2M words x 8 bit) Static RAM
CY7C1069G CY7C1069GE 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcti.CY7C1069GE - 16-Mbit (2M words x 8 bit) Static RAM
CY7C1069G CY7C1069GE 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bit) Static RAM with Error-Correcti.CY7C1062G - 16-Mbit (512 K words x 32 bits) Static RAM
CY7C1062G CY7C1062GE 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512 K words × 32 bits) Static RAM with Erro.CY7C1062GE - 16-Mbit (512 K words x 32 bits) Static RAM
CY7C1062G CY7C1062GE 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512 K words × 32 bits) Static RAM with Erro.CY62168G - 16-Mbit (2M words x 8 bits) Static RAM
CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Co.CY62168GE - 16-Mbit (2M words x 8 bits) Static RAM
CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Co.CY7S1061G - 16-Mbit (1 M words x 16 bit) Static RAM
CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and .CY7S1061GE - 16-Mbit (1 M words x 16 bit) Static RAM
CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and .CY7C1049G - 4-Mbit (512K words x 8 bit) Static RAM
CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correc.CY7C1049GE - 4-Mbit (512K words x 8 bit) Static RAM
CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correc.CY62148G - 4-Mbit (512K words x 8 bit) Static RAM
CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting C.CY62157H - 8-Mbit (512K words x 16 bit) Static RAM
CY62157H MoBL® 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting.IS42S32800 - 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM
IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM P JANUARY 2008 FEATURES • Concurrent auto precharge • Clock rate:166/143 MHz •.IS42VS16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz .IS45S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz .