words Datasheet | Pinout, Features, Price Comparison & PDF

GM71C(S)17400C/CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C(S)17400C/CL is the new generation dynamic RAM organized 4,194,304 wo

CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correc

IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Ful

DATA SHEET 1G bits DDR3 SDRAM EDJ1108DBSE (128M words × 8 bits) EDJ1116DBSE (64M words × 16 bits) Specifications • Density: 1G bits • Organization

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz

IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM Revision History www.datasheet4u.com Revision No History Initial Draf

CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM w

Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully

Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr

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CY7C1041GN 4-Mbit (256K words × 16 bit) Static RAM 4-Mbit (256K words × 16 bit) Static RAM Features ■ High speed ❐ tAA = 10 ns / 15 ns ■ Low active a

CY7C1061G Automotive 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Corr

Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG

Description The GM71C(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C(S)17403C/CL has realized higher density,

IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM P JANUARY 2008 FEATURES • Concurrent auto precharge • Clock rate:166/143 MHz •

Ordering number : EN4795C CMOS LSI LC321664AJ, AM, AT-80 1 MEG (65536 words × 16 bits) DRAM Fast Page Mode, Byte Write Overview The LC321664AJ, AM,