Samsung Semiconductor |
K4R441869A |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
STMicroelectronics |
29F200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory |
Hi-TrendTechnology |
HT6027 |
high-performance low-power smart meters dedicated MCU 256K chip |
STMicroelectronics |
M36W432TG |
32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM |
Atmel (now Microchip Technology) |
AT28C256 |
256K (32K x 8) Paged Parallel EEPROM |
|
Samsung Semiconductor |
K4R441869B |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
|
STMicroelectronics |
M29F200BB |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory |
SK Hynix |
HY534256AS |
256K x 4-bit CMOS DRAM |
FairchildSemiconductor |
24C256 |
256K-Bit 2-Wire Bus Interface Serial EEPROM |
|
SK Hynix |
HY514260 |
256K x 16 CMOS DRAM |
|
Samsung Semiconductor |
K7N401809B |
(K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM |
IBM Microelectronics |
IBM025170 |
(IBM025160 - IBM025171) 256K x 16 Multiport Video RAM |
AMIC Technology |
A29L400 |
512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory |
|
STMicroelectronics |
M29F002BNT |
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory |
Renesas |
R1EX24256BTAS0I |
Two-wire serial interface 256k EEPROM |
BELLING |
BL24C256A |
256K-Bits EEPROM |
|
AMIC Technology |
A62S8316 |
256K X 16 BIT LOW VOLTAGE CMOS SRAM |
|
STMicroelectronics |
M27C400 |
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
|
Samsung Semiconductor |
KM41257A |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode |
|
Samsung Semiconductor |
K4R271669B |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
