27C4002 (STMicroelectronics)
4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu
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W29C020 (Winbond)
256K x 8 CMOS FLASH MEMORY
W29C020
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The devi
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AAA1M304 (NMB Technologies)
Fast Page Mode CMOS 256K x 4 DRAM
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FM1808B (Ramtron)
256Kb Bytewide 5V F-RAM Memory
www.DataSheet.co.kr
Preliminary
FM1808B
256Kb Bytewide 5V F-RAM Memory
Features
256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits
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HY514264B (Hynix Semiconductor)
256K x 16 Extended Data Out Mode DRAM
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MB84256A-10L (Fujitsu)
CMOS 256K bit Low Power SRAM
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29F200 (STMicroelectronics)
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
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SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM
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BL24C256A (BELLING)
256K-Bits EEPROM
BL24C256A 256K bits (32768×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 256 Kbits (32 Kbytes) of EEPRO
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W29C020C (Winbond)
256K x 8 CMOS FLASH MEMORY
W29C020C
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The de
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UPD424256 (NEC Electronics)
256K x 4-Bit CMOD DRAM
www.DataSheet4U.com
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R1EX24256ASAS0I (Renesas Technology)
Two-wire serial interface 256k EEPROM
R1EX24256ASAS0I R1EX24256ATBS0I
Two-wire serial interface 256k EEPROM (32-kword × 8-bit)
REJ03C0327-0001 Preliminary Rev.0.01 Jan. 10, 2008
www.DataS
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M27C400 (STMicroelectronics)
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO
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M27W400 (STMicroelectronics)
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W400
4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM
s
2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC
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HY29F400BT55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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V53C16256H (Mosel Vitelic Corp)
256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
MOSEL VITELIC
V53C16256H 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC) Max. Column Address Ac
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HT6027 (Hi-TrendTechnology)
high-performance low-power smart meters dedicated MCU 256K chip
HT6X2X
HT6X2X
Tel: 021-51035886 Fax: 021-50277833
Email: sales@hitrendtech.com Web: http://www.hitrendtech.com
http://www.hitrendtech.com
() Page
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M27C4002 (STMicroelectronics)
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
Feature summary
■ 5V ± 10% Supply voltage for Read operations
■ Access time: 45ns
■ Low Power c
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K5A3240YBC-T855 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
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CY7C1378C (Cypress Semiconductor)
9-Mbit (256K x 32) Pipelined SRAM
CY7C1378C
9-Mbit (256K x 32) Pipelined SRAM with NoBL™ Architecture
Features
• Pin-compatible and functionally equivalent to ZBT® devices • Internall
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HM62256B (Hitachi Semiconductor)
256k SRAM (32-kword x 8-bit)
HM62256B Series
256k SRAM (32-kword × 8-bit)
ADE-203-135F (Z) Rev. 6.0 Nov. 13, 1997 Description
The Hitachi HM62256B Series is a CMOS static RAM org
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