256K Datasheet | Specifications & PDF Download

Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer •

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E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase  2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µS

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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( DataSheet : www.DataSheet4U.com ) IS61LF25632T/D/J IS61LF25636T/D/J IS61LF51218T/D/J 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS FLOW-THROUGH STATI

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Ordering number : ENA1190B CMOS IC LE25FW203A Overview 2M-bit (256K×8) Serial Flash Memory 30MHz SPI Bus The LE25FW203A is an onboard programmable

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00021-2v0-E 256 K (32 K × 8) Bit SPI MB85RS256B ■ DESCRIPTION MB85RS256B is a FRAM (Ferroelectri

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PDM41256 256K Static RAM 32K x 8-Bit Features s High-speed access times Com’l: 7, 8, 10, 12, and 15 ns Ind’l: 8, 10, 12, and 15 ns s Low power operati

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00023-0v01-E 2 M (256 K × 8) Bit SPI MB85RS2MT ■ DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric

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MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption –

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IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM www.DataShe

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IS61SPS25632T/D IS61LPS25632T/D IS61SPS25636T/D IS61LPS25636T/D IS61SPS51218T/D IS61LPS51218T/D 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE,

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PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low

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VRAM SMJ44C251B MT42C4256 256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89497 • MIL-STD-883 FEATURES

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2001/D 256KB Asynchronous Secondary Cache Module for PowerPC™ The MPC2001 is design

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E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n

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HM6207H Series 256 k High Speed SRAM (256-kword × 1-bit) Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35

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