Datasheet Summary
Features
- Fast Read Access Time
- 150 ns
- Automatic Page Write Operation
- Internal Address and Data Latches for 64 Bytes
- Internal Control Timer
- Fast Write Cycle Times
- Page Write Cycle Time: 3 ms or 10 ms Maximum
- 1 to 64-byte Page Write Operation
- Low Power Dissipation
- 50 mA Active Current
- 200 µA CMOS Standby Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology
- Endurance: 104 or 105 Cycles
- Data Retention: 10 Years
- Single 5V ± 10% Supply
- CMOS and TTL patible Inputs and Outputs
- JEDEC Approved Byte-wide Pinout
- Full Military and Industrial Temperature Ranges
- Green (Pb/Halide-free) Packaging...