Datasheet Summary
Features
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Fast Read Access Time
- 150 ns Fast Byte Write
- 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output Low Power 30 mA Active Current 100 µa CMOS Standby Current High Reliability Endurance: 104 or 105 Cycles Data Retention: 10 Years 5V ± 10% Supply CMOS & TTL patible Inputs and Outputs JEDEC Approved Byte Wide Pinout mercial and Industrial Temperature Ranges
16K (2K x 8) CMOS E2PROM
Description
The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with...