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AT28C17
Features
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Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output Low Power 30 mA Active Current 100 µa CMOS Standby Current High Reliability Endurance: 104 or 105 Cycles Data Retention: 10 Years 5V ± 10% Supply CMOS & TTL Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges
16K (2K x 8) CMOS E2PROM
Description
The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits.
AT28C17 Datasheet
