Datasheet Summary
Features
- Read Access Time
- 200 ns
- Automatic Page Write Operation
- Internal Address and Data Latches for 256 Bytes
- Internal Control Timer
- Fast Write Cycle Time
- Page Write Cycle Time
- 10 ms Maximum
- 1 to 256 Byte Page Write Operation
- Low Power Dissipation
- 50 mA Active Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology
- Endurance: 10,000 Cycles
- Data Retention: 10 Years
- Single 5V ± 10% Supply
- CMOS and TTL patible Inputs and Outputs
- JEDEC Approved Byte-Wide Pinout
1. Description
The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits...