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AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM

General Description

The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM).

Its 4 megabits of memory is organized as 524,288 words by 8 bits.

Key Features

  • Read Access Time.
  • 200 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 256 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 256 Byte Page Write Operation.
  • Low Power Dissipation.
  • 50 mA Active Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.
  • High Reliability CMO.

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Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM
AT28C16 16K 2K x 8 CMOS E2PROM
AT28C17 16K 2K x 8 CMOS E2PROM
AT28C256 256K (32K x 8) Paged Parallel EEPROM
AT28C64 64K (8K x 8) Parallel EEPROMs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 256 Byte Page Write Operation • Low Power Dissipation – 50 mA Active Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-Wide Pinout 1. Description The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits.