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K4R441869A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Download the K4R441869A datasheet PDF. This datasheet also covers the K4R variant, as both devices belong to the same 256k x 16/18 bit x 2*16 dependent banks direct rdramtm family and are provided as variant models within a single manufacturer datasheet.

General Description

Signal SIO1,SIO0 I/O I/O Type CMOSa # of Pins 2 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Key Features

  • for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4R-4418.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description
K4R441869B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669E 128Mbit RDRAM(E-die)
K4R271669F 128Mbit RDRAM(F-die)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver. Direct RDRAM™ Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register On page 44 - Add the Tj value from TBD to Max. 100°C @ Table 18 On page 46 - Add the ΘJC value from TBD to 0.2°C/Watt @ Table 20 On page 55 - Add the current values for 356MHz and 300MHz RDRAM device Version 1.