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K4R441869A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

This page provides the datasheet information for the K4R441869A, a member of the K4R 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM family.

Datasheet Summary

Description

Signal SIO1,SIO0 I/O I/O Type CMOSa # of Pins 2 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Features

  • for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

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Datasheet Details

Part number K4R441869A
Manufacturer Samsung semiconductor
File Size Direct Link
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Datasheet download datasheet K4R441869A Datasheet
Additional preview pages of the K4R441869A datasheet.

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Full PDF Text Transcription

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K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver. Direct RDRAM™ Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register On page 44 - Add the Tj value from TBD to Max. 100°C @ Table 18 On page 46 - Add the ΘJC value from TBD to 0.2°C/Watt @ Table 20 On page 55 - Add the current values for 356MHz and 300MHz RDRAM device Version 1.
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