K4R271669E Overview
The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rate while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes).
K4R271669E Key Features
- CS8 -CS8 800 800 45 45
- Highest sustained bandwidth per DRAM device
- 1.6 GB/s sustained data transfer rate
- Separate control and data buses for maximized efficiency
- Separate row and column control buses for easy scheduling and highest performance
- 32 banks: four transactions can take place simultaneously at full bandwidth data rates
- Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions