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K4R271669E - 128Mbit RDRAM(E-die)

Datasheet Summary

Description

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Features

  • for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization tRAC I/O (Row Bin Freq. Access MHz Time) ns -CS8 -CS8 800 800 45 45 Features.
  • Highest sustained bandwidth per DRAM device - 1.6 GB/s sustained data transfer rate - Separate control and data.

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Datasheet Details

Part number K4R271669E
Manufacturer Samsung semiconductor
File Size 290.81 KB
Description 128Mbit RDRAM(E-die)
Datasheet download datasheet K4R271669E Datasheet
Additional preview pages of the K4R271669E datasheet.

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Full PDF Text Transcription

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K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R271669E Change History Version 1.4 ( July 2002 ) Direct RDRAM™ - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 128Mbit D-die RDRAM for short channel Datasheet Version 1.4 Page 0 Version 1.4 July 2002 K4R271669E Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including communications, graphics, video and any other application where high bandwidth and low latency are required. The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16.
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