K4R271669E - 128Mbit RDRAM(E-die)

Product Overview

Samsung semiconductor

Part number	K4R271669E
Manufacturer	Samsung semiconductor
File Size	290.81 KB
Description	128Mbit RDRAM(E-die)
Datasheet	K4R271669E Datasheet
Additional preview pages of the K4R271669E datasheet.

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.

for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669E Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization tRAC I/O (Row Bin Freq. Access MHz Time) ns -CS8 -CS8 800 800 45 45 Features.
Highest sustained bandwidth per DRAM device - 1.6 GB/s sustained data transfer rate - Separate control and data.

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Published: Apr 7, 2005 |