K4R271669F Description
K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R271669F Change History Version 1.4 ( September 2003 ) Direct RDRAM™ - First Copy ( Version 1.4 is named to unify the version of ponent and device operation datasheets) - Based on the 128Mbit E-die RDRAM for short channel Datasheet Version 1.4 Version 1.41 ( January 2004...
K4R271669F Key Features
- CS8 -CS8 800 800 45 45
- Highest sustained bandwidth per DRAM device
- 1.6 GB/s sustained data transfer rate
- Separate control and data buses for maximized efficiency
- Separate row and column control buses for easy scheduling and highest performance
- 32 banks: four transactions can take place simultaneously at full bandwidth data rates
- Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions