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K4R271669F Datasheet

128mbit Rdram(f-die)

Manufacturer: Samsung Semiconductor

K4R271669F Overview

K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R271669F Change History Version 1.4 ( September 2003 ) Direct RDRAM™ - First Copy ( Version 1.4 is named to unify the version of ponent and device operation datasheets) - Based on the 128Mbit E-die RDRAM for short channel Datasheet Version 1.4 Version 1.41 ( January 2004...

K4R271669F Key Features

  • CS8 -CS8 800 800 45 45
  • Highest sustained bandwidth per DRAM device
  • 1.6 GB/s sustained data transfer rate
  • Separate control and data buses for maximized efficiency
  • Separate row and column control buses for easy scheduling and highest performance
  • 32 banks: four transactions can take place simultaneously at full bandwidth data rates
  • Low latency features
  • Write buffer to reduce read latency
  • 3 precharge mechanisms for controller flexibility
  • Interleaved transactions

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669E 128Mbit RDRAM(E-die)
K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R571669D 256/288Mbit RDRAM(D-die)
K4R761869A 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
K4R881869 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869D 256/288Mbit RDRAM(D-die)
K4R881869M 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669F Distributor