CY62146G-MoBL Datasheet - Cypress

CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM

CY62146G is high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Device is accessed by asserting the chip enable (CE) input LOW. Data writes are performed by asserting the Write Enable (WE) input LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins.

CY62146G-MoBL Features

* AEC-Q100 qualified

* High speed: 45 ns

* Temperature Range

* Automotive-A: -40 C to +85 C

* Ultra-low standby power

* Typical standby current: 3.5 A

* Embedded ECC for single-bit error correction[1]

* Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V

* 1.0-V data

CY62146G-MoBL-Cypress.pdf

CY62146G-MoBL Datasheet Preview — Preview of CY62146G-MoBL PDF

Datasheet Details

Part number:

CY62146G-MoBL

Manufacturer:

Cypress

File Size:

486.82 KB

Description:

4-mbit (256k words x 16 bit) static ram.

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TAGS

CY62146G-MoBL CY62146G-MoBL 4-Mbit 256K words bit Static RAM Cypress

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