IS42VS83200D 256-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution

Description

IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY 2009 .
A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE.

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Datasheet Specifications

Part number: IS42VS83200D
Manufacturer: Integrated Silicon Solution
File Size: 860.56 KB
Datasheet: IS42VS83200D-IntegratedSiliconSolution.pdf
Description: 256-MBIT SYNCHRONOUS DRAM

Features

* Clock frequency: 133, 125 MHz
* Fully synchronous; all signals referenced to a positive clock edge
* Internal bank for hiding row access/precharge
* Single Power supply: 1.8V + 0.1V
* LVCMOS interface
* Programmable burst length
* (1,

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IS42VS83200J IS42VS16100E IS42VS16100F IS42VS16160J IS42VS16400E IS42VS32800J

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IS42VS83200D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution

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