K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1.
For upda
K4D551638H-LC50 Features
* 2.35V ~ 2.7V power supply for device operation
* 2.35V ~ 2.7V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst typ
Datasheet Details
K4D551638H-LC50, K4D551638H
Samsung
235.41 KB
256mbit gddr sdram.
This datasheet PDF includes multiple part numbers: K4D551638H-LC50, K4D551638H.
Please refer to the document for exact specifications by model.
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