K4D551638H-LC50 Datasheet - Samsung

K4D551638H-LC50 256Mbit GDDR SDRAM

K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For upda.

K4D551638H-LC50 Features

* 2.35V ~ 2.7V power supply for device operation

* 2.35V ~ 2.7V power supply for I/O interface

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst typ

K4D551638H-LC50 Datasheet (235.41 KB)