* 2.35V ~ 2.7V power supply for device operation
* 2.35V ~ 2.7V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst typ
K4D551638H-LC40 Datasheet (235.41 KB)
K4D551638H-LC40
Samsung
235.41 KB
256mbit gddr sdram.
K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC.
📁 Related Datasheet
K4D551638H-LC50 256Mbit GDDR SDRAM (Samsung)
K4D551638H 256Mbit GDDR SDRAM (Samsung)
K4D551638F-TC 256Mbit GDDR SDRAM (Samsung)
K4D553238F-JC 256Mbit GDDR SDRAM (Samsung)
K4D261638 128Mbit GDDR SDRAM (Samsung)
K4D261638F 128Mbit GDDR SDRAM (Samsung)
K4D261638K 128Mbit GDDR SDRAM (Samsung)
K4D261638K-LC40 128Mbit GDDR SDRAM (Samsung)
K4D261638K-LC50 128Mbit GDDR SDRAM (Samsung)
K4D263238A 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM (Samsung)
