Description
K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC.
FOR 4M x 16Bit x 4 Bank GDDR SDRAM
The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 1.
Features
* 2.35V ~ 2.7V power supply for device operation
* 2.35V ~ 2.7V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs
-. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst typ
Applications
* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
