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K4D551638H-LC40

256Mbit GDDR SDRAM

K4D551638H-LC40 Features

* 2.35V ~ 2.7V power supply for device operation

* 2.35V ~ 2.7V power supply for I/O interface

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst typ

K4D551638H-LC40 Datasheet (235.41 KB)

Preview of K4D551638H-LC40 PDF

Datasheet Details

Part number:

K4D551638H-LC40

Manufacturer:

Samsung

File Size:

235.41 KB

Description:

256mbit gddr sdram.
K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC.

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TAGS

K4D551638H-LC40 256Mbit GDDR SDRAM Samsung

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