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K4D26323GC, K4D26323QG 128Mbit GDDR SDRAM

K4D26323GC Description

K4D26323QG-GC 128M GDDR SDRAM www.DataSheet4U.com 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION .
FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32.

K4D26323GC Features

* 1.8V ± 0.1V power supply for device operation
* 1.8V ± 0.1V power supply for I/O interface www. DataSheet4U. com
* No Wrtie-Interrupted by Read Function
* 4 DQS’s ( 1DQS / Byte )
* Data I/O transactions on both edges of Data strobe
* DLL aligns DQ and

K4D26323GC Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. Samsung Electronics reserves the right to change products or specification without notice. - 1 -

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4D26323GC, K4D26323QG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4D26323GC, K4D26323QG
Manufacturer
Samsung semiconductor
File Size
360.75 KB
Datasheet
K4D26323QG_Samsungsemiconductor.pdf
Description
128Mbit GDDR SDRAM
Note
This datasheet PDF includes multiple part numbers: K4D26323GC, K4D26323QG.
Please refer to the document for exact specifications by model.

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Samsung semiconductor K4D26323GC-like datasheet