K4D26323GC Datasheet, Sdram, Samsung semiconductor

✔ K4D26323GC Features

1.8V ± 0.1V power supply for device operation
1.8V ± 0.1V power supply for I/O interface www.DataSheet4U.com
No Wrtie-Interrupted by Read Function
4 DQS’s ( 1DQS

✔ K4D26323GC Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense

PDF File Details

Samsung semiconductor manufacturer logo

Part number:

K4D26323GC

Manufacturer:

Samsung semiconductor

File Size:

360.75 KB

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📄 Datasheet

Description:

128mbit gddr sdram. FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048

📥 Download PDF (360.75 KB)

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K4D26323GC 128Mbit GDDR SDRAM Samsung semiconductor