Description
FOR 1M x 32Bit x 4 Bank DDR SDRAM
The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.Synchronous
Features
- 2.5V ± 5% power supply for device operation.
- 2.5V ± 5% power supply for I/O interface.
- SSTL_2 compatible inputs/outputs.
- 4 banks operation.
- MRS cycle with address key programs -. Read latency 3, 4 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
- All inputs except data & DM are sampled at the positive going edge of the system clock.
- Differential clock input.
- No Wrtie-Interrupted by Read Function.
K4D263238G-GC_Samsungsemiconductor.pdf
