K4D263238G-GC Datasheet (Samsung)

K4D263238G-GC, 128Mbit GDDR SDRAM

K4D263238G-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 1.4 November 2004 Samsung Electronics reserves the right to change products or specification without notice.

- 1 - Rev 1.4 (Nov 2004) K4D263238G-GC Revision History Revision 1.4(Nov 30, 2004) Typo Corrected in DC table 128M GDDR SDRAM Revision 1.3(Nov 12, 2004) Changed AC spec format

K4D263238G-GC Features

* 2.5V ± 5% power supply for device operation

* 2.5V ± 5% power supply for I/O interface

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 3, 4 (clock) -. Burst length (2, 4 and 8) -. Burst type (seque