K4D26323QG Datasheet - Samsung semiconductor

K4D26323QG 128Mbit GDDR SDRAM

K4D26323QG-GC 128M GDDR SDRAM www.DataSheet4U.com 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY .

K4D26323QG Features

* 1.8V ± 0.1V power supply for device operation

* 1.8V ± 0.1V power supply for I/O interface www.DataSheet4U.com

* No Wrtie-Interrupted by Read Function

* 4 DQS’s ( 1DQS / Byte )

* Data I/O transactions on both edges of Data strobe

* DLL aligns DQ and

K4D26323QG_Samsungsemiconductor.pdf