K4D26323QG 128Mbit GDDR SDRAM

Samsung semiconductor

Description

K4D26323QG-GC 128M GDDR SDRAM www.DataSheet4U.com 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION .
FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32.

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Datasheet Specifications

Part number: K4D26323QG
Manufacturer: Samsung semiconductor
File Size: 360.75 KB
Datasheet: K4D26323QG_Samsungsemiconductor.pdf
Description: 128Mbit GDDR SDRAM

Features

* 1.8V ± 0.1V power supply for device operation
* 1.8V ± 0.1V power supply for I/O interface www. DataSheet4U. com
* No Wrtie-Interrupted by Read Function
* 4 DQS’s ( 1DQS / Byte )
* Data I/O transactions on both edges of Data strobe
* DLL aligns DQ and

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. Samsung Electronics reserves the right to change products or specification without notice. - 1 -

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K4D26323QG 128Mbit GDDR SDRAM Samsung semiconductor

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