K4D263238E Datasheet - Samsung

K4D263238E 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM

K4D263238E-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 1.7 November 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.7 (Nov. 2003) K4D263238E-GC Revision History Revision 1.7 (November 14, 2003) Typo corrected 128M GDDR SDRAM Revision 1.6 (August 14, 2003) Added a note for the input refere.

K4D263238E Features

* VDD/VDDQ = 2.8V ± 5% for -GC25

* VDD/VDDQ = 2.5V ± 5% for -GC2A/33/36/40/45

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 3, 4, 5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (se

K4D263238E_Samsungsemiconductor.pdf