K4D263238E - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM

Samsung

📥 Download Datasheet

K4D263238E Datasheet Preview — Preview of K4D263238E PDF

Datasheet Details

Part number	K4D263238E
Manufacturer	Samsung
File Size	310.99 KB
Description	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
Datasheet	K4D263238E_Samsungsemiconductor.pdf

K4D263238E Product details

Description

FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.Synchronous

Features

VDD/VDDQ = 2.8V ± 5% for -GC25.
VDD/VDDQ = 2.5V ± 5% for -GC2A/33/36/40/45.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 3, 4, 5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
Full page burst length for sequential burst type only.
Start address of the full page burst should be even.
All inputs except data & DM are sampled a.

📁 K4D263238E Similar Datasheet

K4D263238I-VC - 128M-Bit GDDR SDRAM (Samsung Electronics)
K4D26323GC - 128Mbit GDDR SDRAM (Samsung semiconductor)
K4D26323QG - 128Mbit GDDR SDRAM (Samsung semiconductor)

Other Datasheets by Samsung

K4D263238A - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238D - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238F - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238G-GC - 128Mbit GDDR SDRAM
K4D263238I-UC - 128M GDDR SDRAM
K4D263238M - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM

Published: Apr 25, 2005 |