* VDD/VDDQ = 2.8V ± 5% for -GC25
* VDD/VDDQ = 2.5V ± 5% for -GC2A/33/36/40/45
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3, 4, 5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (se
K4D263238E Datasheet (310.99 KB)
K4D263238E
Samsung
310.99 KB
1m x 32bit x 4 banks graphic double data rate synchronous dram.
K4D263238E-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and .
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