K4D263238E 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM

Samsung

Description

K4D263238E-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and .
FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32.

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Datasheet Specifications

Part number: K4D263238E
Manufacturer: Samsung
File Size: 310.99 KB
Datasheet: K4D263238E_Samsungsemiconductor.pdf
Description: 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM

Features

* VDD/VDDQ = 2.8V ± 5% for -GC25
* VDD/VDDQ = 2.5V ± 5% for -GC2A/33/36/40/45
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3, 4, 5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (se

Applications

* - 3 - Rev 1.7 (Nov. 2003) K4D263238E-GC PIN CONFIGURATION (Top View) 2 B C D E F G H J K L M N DQS0 DQ4 DQ6 DQ7 DQ17 DQ19 DQS2 DQ21 DQ22 CAS RAS CS 128M GDDR SDRAM 3 DM0 VDDQ DQ5 VDDQ DQ16 DQ18 DM2 DQ20 DQ23 WE NC NC 4 VSSQ NC VSSQ VDD VDDQ VDDQ NC VDDQ VDDQ VDD NC BA0 5 DQ3 VDDQ VSSQ VSS VS

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K4D263238E 32Bit Banks Graphic Double Data Rate Synchronous DRAM Samsung

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