K4D261638F Datasheet - Samsung

K4D261638F 128Mbit GDDR SDRAM

K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.2 (Jan. 2004) K4D261638F Revision History Revision 1.2 (January 30, 2004) Changed tWR & tWR_A of K4D261638F-TC25/2A/33/36 from 3tCK to 4tCK Changed tRC of K4D261638F-TC25 from 17tCK to 18tCK Changed tRC of K4D261638F-TC2A/33.

K4D261638F Features

* 2.5V + 5% power supply for device operation

* 2.5V + 5% power supply for I/O interface

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 3, 4 and 5(clock) -. Burst length (2, 4 and 8) -. Burst type (

K4D261638F_Samsungsemiconductor.pdf