Datasheet Details
- Part number
- K4D261638
- Manufacturer
- Samsung
- File Size
- 225.88 KB
- Datasheet
- K4D261638_Samsungsemiconductor.pdf
- Description
- 128Mbit GDDR SDRAM
K4D261638 Description
K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Ele.
FOR 2M x 16Bit x 4 Bank DDR SDRAM
The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16.
K4D261638 Features
* 2.5V + 5% power supply for device operation
* 2.5V + 5% power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3, 4 and 5(clock) -. Burst length (2, 4 and 8) -. Burst type (
K4D261638 Applications
* - 3 -
Rev. 1.2 (Jan. 2004)
K4D261638F
PIN CONFIGURATION (Top View)
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64
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