K4D551638F-TC - 256Mbit GDDR SDRAM

Samsung

K4D551638F-TC Datasheet Preview — Preview of K4D551638F-TC PDF

Datasheet Details

Part number	K4D551638F-TC
Manufacturer	Samsung
File Size	206.99 KB
Description	256Mbit GDDR SDRAM
Datasheet	K4D551638F-TC_Samsungsemiconductor.pdf

K4D551638F-TC Product details

Description

FOR 4M x 16Bit x 4 Bank GDDR SDRAM The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.Synchronous

Features

2.6V + 0.1V power supply for device operation.
2.6V + 0.1V power supply for I/O interface.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock.
Differential clock input.
No Write-Interrupted by Read Function.

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Published: Apr 25, 2005 |