K4D551638F-TC 256Mbit GDDR SDRAM

Samsung

Description

Target Spec K4D551638F-TC 256M GDDR SDRAM 256Mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 .
FOR 4M x 16Bit x 4 Bank GDDR SDRAM The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 1.

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Datasheet Specifications

Part number: K4D551638F-TC
Manufacturer: Samsung
File Size: 206.99 KB
Datasheet: K4D551638F-TC_Samsungsemiconductor.pdf
Description: 256Mbit GDDR SDRAM

Features

* 2.6V + 0.1V power supply for device operation
* 2.6V + 0.1V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequ

Applications

* - 3 - Rev 1.7 (June 2004) Target Spec K4D551638F-TC PIN CONFIGURATION (Top View) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

K4D551638F-TC Distributors

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K4D551638F-TC 256Mbit GDDR SDRAM Samsung

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