* 2.35V ~ 2.7V power supply for device operation
* 2.35V ~ 2.7V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst typ
K4D551638H Datasheet (235.41 KB)
K4D551638H
Samsung
235.41 KB
256mbit gddr sdram.
K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC.
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