F50L2G41LB-104YG2M Datasheet - ESMT

F50L2G41LB-104YG2M - 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

F50L2G41LB-104YG2M Features

* Voltage Supply: 3.3V (2.7V~3.6V)

* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

* Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell

Datasheet Details

F50L2G41LB-104YG2M

ESMT

1.32 MB

3.3v 2 gbit (2 x 1 gbit) spi-nand flash memory.

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