F50L2G41LB-66YG2ME - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

Product Overview

ESMT

Part number	F50L2G41LB-66YG2ME
Manufacturer	ESMT
File Size	1.25 MB
Description	1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Datasheet	F50L2G41LB-66YG2ME Datasheet
Note	This datasheet PDF includes multiple part numbers: F50L2G41LB-66YG2ME, F50D2G41LB-50YG2M. Please refer to the document for exact specifications by model.
Additional preview pages of the F50L2G41LB-66YG2ME datasheet.

Voltage Supply: 1.8V (1.7V~1.95V).
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
Memory Cell: 1bit/Memory Cell.
Support SPI-Mode 0 and SPI-Mode 31.
Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
Hard.

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Published: Apr 2, 2019 |