F5033 Datasheet, mosfet equivalent, Fuji Electric

TAGS

📁 Related Datasheet

F5001 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F5001H - INTELIGENT POWER SWITCH (Fuji Electric)
.

F5019 - Froide (CSF)
.

F501D - 600V Depletion-Mode Power MOSFET (Perfect Intelligent)
600V Depletion-Mode Power MOSFET General Features  Proprietary Advanced Planar Technology  Depletion Mode (Normally On)  ESD improved Capability  .

F50D1G41LB - 1.8V 1-Gbit SPI-NAND Flash Memory (ESMT)
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.

F50D1G41LB-50YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.

F50D1G41LB-50YG2ME - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.

F50D1G41LB-66YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.

F50D1G41LB-66YG2ME - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.

F50D2G41LB-50YG2M - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory (ESMT)
ESMT Flash (Preliminary) F50D2G41LB (2M) 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Co.