F50D1G41LB-50YG2ME, F50D1G41LB-50YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory

ESMT

F50D1G41LB-50YG2ME Datasheet Preview — This datasheet PDF includes multiple part numbers: F50D1G41LB-50YG2ME, F50D1G41LB-50YG2M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	F50D1G41LB-50YG2ME, F50D1G41LB-50YG2M
Manufacturer	ESMT
File Size	1.47 MB
Description	1.8V 1 Gbit SPI-NAND Flash Memory
Datasheet	F50D1G41LB-50YG2M-ESMT.pdf
Note	This datasheet PDF includes multiple part numbers: F50D1G41LB-50YG2ME, F50D1G41LB-50YG2M. Please refer to the document for exact specifications by model.

F50D1G41LB-50YG2ME Product details

Description

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum.

Features

Voltage Supply: 1.8V (1.7V~1.95V).
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
Memory Cell: 1bit/Memory Cell.
Support SPI-Mode 0 and SPI-Mode 31.
Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
Hard.

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Published: Apr 2, 2019 |