F50D1G41LB-66YG2M Datasheet, Memory, ESMT

✔ F50D1G41LB-66YG2M Features

Voltage Supply: 1.8V (1.7V~1.95V)
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
Automatic Program and Erase - Page Program

PDF File Details

ESMT manufacturer logo

Part number:

F50D1G41LB-66YG2M

Manufacturer:

ESMT

File Size:

1.47 MB

Download:

📄 Datasheet

Description:

1.8v 1 gbit spi-nand flash memory. The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volat

📥 Download PDF (1.47 MB)

📁 Related Datasheet

F50D1G41LB-66YG2ME - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)

F50D1G41LB-50YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)

F50D1G41LB-50YG2ME - 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)

F50D1G41LB - 1.8V 1-Gbit SPI-NAND Flash Memory (ESMT)

F50D2G41LB-50YG2M - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory (ESMT)

F50D2G41LB-66YG2M - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory (ESMT)

F50D2G41XA - 1.8V 2-Gbit SPI-NAND Flash Memory (ESMT)

F50D4G41XB - 1.8V 4-Gbit SPI-NAND Flash Memory (ESMT)

TAGS

F50D1G41LB-66YG2M 1.8V Gbit SPI-NAND Flash Memory ESMT