Datasheet Details
| Part number | F50D1G41LB-66YG2ME |
|---|---|
| Manufacturer | ESMT (Elite Semiconductor Microelectronics Technology) |
| File Size | 1.47 MB |
| Description | 1.8V 1 Gbit SPI-NAND Flash Memory |
| Datasheet |
 F50D1G41LB-66YG2ME Datasheet
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General Description
The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum.
Key Features
- Voltage Supply: 1.8V (1.7V~1.95V).
- Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
- Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
- Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
- Memory Cell: 1bit/Memory Cell.
- Support SPI-Mode 0 and SPI-Mode 31.
- Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
- Hard.