F50D2G41LB-50YG2M - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

ESMT

Datasheet Details

Part number	F50D2G41LB-50YG2M
Manufacturer	ESMT
File Size	1.25 MB
Description	1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Datasheet	F50D2G41LB-50YG2M-ESMT.pdf

Voltage Supply: 1.8V (1.7V~1.95V).
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
Memory Cell: 1bit/Memory Cell.
Support SPI-Mode 0 and SPI-Mode 31.
Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
Hard.

📁 F50D2G41LB-50YG2M Similar Datasheet

F5001 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F5001H - INTELIGENT POWER SWITCH (Fuji Electric)
F5019 - Froide (CSF)
F501D - 600V Depletion-Mode Power MOSFET (Perfect Intelligent)
F5033 - INTELLIGENT POWER MOSFET (Fuji Electric)
F50L1G41A - 3.3V 1 Gbit SPI-NAND Flash Memory (Elite Semiconductor)
F50L512M41A - 3.3V 512 Mbit SPI-NAND Flash Memory (Elite Semiconductor)
F50N06LE - 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs (Intersil Corporation)

Other Datasheets by ESMT

Published: Apr 2, 2019 |