F59L2G81XA
ESMT
3.00 MB
3.3v nand flash memory.
ESMT
F59L2G81XA (2B)
Flash
FEATURES
* Voltage Supply: 3.3V (2.7V to 3.6V) * Open NAND Flash Interf.
NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These.
📁 Related Datasheet
F59L2G81XA-25BG2B - 3.3V NAND Flash Memory
(ESMT)
ESMT
F59L2G81XA (2B)
Flash
FEATURES
Voltage Supply: 3.3V (2.7V to 3.6V) Open NAND Flash Interface (ONFI) 1.0-pliant1 Single-level cell (SLC.
F59L2G81XA-25TG2B - 3.3V NAND Flash Memory
(ESMT)
ESMT
F59L2G81XA (2B)
Flash
FEATURES
Voltage Supply: 3.3V (2.7V to 3.6V) Open NAND Flash Interface (ONFI) 1.0-pliant1 Single-level cell (SLC.
F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit A.
F59L2G81KA - 2-Gbit 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply VCC: 3.3V (2.7 V ~ 3.6V)
Organization Page Size: (2K + 128) bytes Data Register: (2K + 128) bytes Block.
F59L2G81LA-25BG - 2 Gbit (256M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automat.
F59L2G81LA-25TG - 2 Gbit (256M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automat.
