F59L2G81KA Datasheet (ESMT) - 2-Gbit 3.3V NAND Flash Memory

F59L2G81KA, 2-Gbit 3.3V NAND Flash Memory

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes).

The device is a memory device which utilizes the

F59L2G81KA Features

* Voltage Supply VCC: 3.3V (2.7 V ~ 3.6V)

* Organization Page Size: (2K + 128) bytes Data Register: (2K + 128) bytes Block Size: 64Pages = (128K + 8K) bytes Number of Block per Die (LUN)= 2048

* Automatic Program and Erase Page Program: (2K + 128) bytes Block Erase: (128K +