F59L4G81A Datasheet - Elite Semiconductor

F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory

The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve va.

F59L4G81A Features

* Voltage Supply: 3.3V (2.7V ~ 3.6V)

* Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes

* Page Read Operation - Page Size: (2K + 64) bytes - Random Re

F59L4G81A-EliteSemiconductor.pdf