F59L4G81A Datasheet - Elite Semiconductor

4 Gbit (512M x 8) 3.3V NAND Flash Memory

F59L4G81A Features

* Voltage Supply: 3.3V (2.7V ~ 3.6V)

* Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes

* Page Read Operation - Page Size: (2K + 64) bytes - Random Re

F59L4G81A General Description

The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve va.

F59L4G81A Datasheet (1.52 MB)

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Datasheet Details

Part number:

F59L4G81A

Manufacturer:

Elite Semiconductor

File Size:

1.52 MB

Description:

4 gbit (512m x 8) 3.3v nand flash memory.

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F59L4G81A Gbit 512M 3.3V NAND Flash Memory Elite Semiconductor

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F59L4G81A Features

F59L4G81A General Description

Datasheet Details

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