Part number:
F59L4G81XB
Manufacturer:
ESMT
File Size:
2.42 MB
Description:
3.3v nand flash memory.
* Operating voltage range VCC: 2.7
* 3.6V
* Open NAND Flash Interface (ONFI) 1.0-compliant1
* Single-level cell (SLC) technology
* Organization Page size: 4352 bytes (4096 + 256 bytes) Block size: 64 pages Number of planes: 1
* Asynchronous I/O performance tRC/tWC
F59L4G81XB Datasheet (2.42 MB)
F59L4G81XB
ESMT
2.42 MB
3.3v nand flash memory.
📁 Related Datasheet
F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit A.
F59L4G81CA-25BG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
Mo.
F59L4G81CA-25TG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
Mo.
F59L4G81KA - 4-Gbit 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply VCC: 3.3V (2.7 V ~ 3.6V)
Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Block.
F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic.
F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .
F59L1G81LB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
F59L1G81LB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.