F59L4G81KA
ESMT
1.33 MB
4-gbit 3.3v nand flash memory.
ESMT
Flash
FEATURES
* Voltage Supply VCC: 3.3V (2.7 V ~ 3.6V)
* Organization Page Size: (4K + 25.
The device has 4352-byte static registers which allow program and read data to be transferred betwee.
📁 Related Datasheet
F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit A.
F59L4G81CA-25BG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
Mo.
F59L4G81CA-25TG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
Mo.
F59L4G81XB - 3.3V NAND Flash Memory
(ESMT)
ESMT
F59L4G81XB (2X)
Flash
4 Gbit (512M x 8) 3.3V NAND Flash Memory
FEATURES
Operating voltage range VCC: 2.7–3.6V
Open NAND Flash Interface.
F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic.
F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .
