F59L4G81KA Datasheet - ESMT

F59L4G81KA 4-Gbit 3.3V NAND Flash Memory

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes). The device is a memory device which utilizes the I/O.

F59L4G81KA Features

* Voltage Supply VCC: 3.3V (2.7 V ~ 3.6V)

* Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Block Size: 64Pages = (256K + 16K) bytes Number of Planes: 1 Number of Block per Die (LUN)= 2048

* Automatic Program and Erase Page Program: (4K + 256) bytes

F59L4G81KA-ESMT.pdf