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F59D2G161A

2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

F59D2G161A Features

* Voltage Supply: 1.8V (1.7V ~ 1.95V)

* Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Era

F59D2G161A General Description

The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased in.

F59D2G161A Datasheet (1.54 MB)

Preview of F59D2G161A PDF

Datasheet Details

Part number:

F59D2G161A

Manufacturer:

Elite Semiconductor

File Size:

1.54 MB

Description:

2 gbit (256m x 8 / 128m x 16) 1.8v nand flash memory.

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F59D2G161A Gbit 256M 128M 1.8V NAND Flash Memory Elite Semiconductor

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