F59D2G161A Datasheet, Memory, Elite Semiconductor

F59D2G161A Features

• Memory
• Voltage Supply: 1.8V (1.7V ~ 1.95V)
• Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M)

PDF File Details

Part number:

F59D2G161A

Manufacturer:

Elite Semiconductor

File Size:

1.54MB

Download:

📄 Datasheet

Description:

2 gbit (256m x 8 / 128m x 16) 1.8v nand flash memory. The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity). The device is offered in 1.8V VCC

TAGS

F59D2G161A

Elite Semiconductor

📁 Related Datasheet

F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit.

F59D2G81XA-45BG2B - 2 Gbit (256M x 8) 1.8V NAND Flash Memory (ESMT)
ESMT F59D2G81XA (2B) Flash FEATURES  Voltage Supply: 1.8V (1.7V to 1.95V)  Open NAND Flash Interface (ONFI) 1.0-pliant1  Single-level cell (SL.

F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB-45BG2M - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB-45TG2M - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.