Description
The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
Features
- Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V).
- Organization Page Size: (2K + 128) bytes Data Register: (2K + 128) bytes Block Size: 64Pages = (128K + 8K) bytes Number of Block per Die (LUN)= 2048.
- Automatic Program and Erase Page Program: (2K + 128) bytes Block Erase: (128K + 8K) bytes.
- Page Read Operation Random Read: 25us (Max. ) Read Cycle: 45ns.
- Write Cycle Time Page Program Time: 400us (Typ. ) 700us (Max. ) Block Erase Time: 3.5ms (Typ. ) 10ms (Max. ).