F59D1G161LB-45TG2M Datasheet, Memory, ESMT

✔ F59D1G161LB-45TG2M Features

Voltage Supply: 1.8V (1.7 V ~ 1.95V)
Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x

ESMT manufacturer logo

F59D1G161LB-45TG2M

ESMT

1.75 MB

1 gbit (128m x 8/ 64m x 16) 1.8v nand flash memory.

📁 Related Datasheet

F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161MB - 1.8V NAND Flash Memory (ESMT)

F59D1G161MB-45BG2M - 1.8V NAND Flash Memory (ESMT)

F59D1G161MB-45TG2M - 1.8V NAND Flash Memory (ESMT)

F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

TAGS

F59D1G161LB-45TG2M Gbit 128M 64M 1.8V NAND Flash Memory ESMT