F59D1G161MA-45BG2L Datasheet PDF - ESMT 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Specs

F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

This page provides the datasheet information for the F59D1G161MA-45BG2L, a member of the F59D1G81MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory family.

Datasheet Summary

Features

z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word z Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max. ) - Serial A.

Datasheet Details

Part number	F59D1G161MA-45BG2L
Manufacturer	ESMT
File Size	1.50 MB
Description	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
Datasheet	F59D1G161MA-45BG2L Datasheet
Additional preview pages of the F59D1G161MA-45BG2L datasheet.

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Full PDF Text Transcription

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word z Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.) z Command/Address/Data Multiplexed I/O Port F59D1G81MA / F59D1G161MA (2L) 1 Gbit (128M x 8/ 64M x 16) 1.

Published: Apr 2, 2019 |