F59D1G161MA-45BG2L

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

ESMT

F59D1G161MA-45BG2L Features

* z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit z Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K +

F59D1G161MA-45BG2L Datasheet (1.50 MB)

F59D1G161MA-45BG2L Datasheet Preview — Preview of F59D1G161MA-45BG2L PDF

Datasheet Details

Part number:

F59D1G161MA-45BG2L

Manufacturer:

ESMT

File Size:

1.50 MB

Description:

1 gbit (128m x 8/ 64m x 16) 1.8v nand flash memory.

📁 Related Datasheet

F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB-45BG2M - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB-45TG2M - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

TAGS

F59D1G161MA-45BG2L Gbit 128M 64M 1.8V NAND Flash Memory ESMT

Image Gallery