F59D2G81A Overview
The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
F59D2G81A Key Features
- Voltage Supply: 1.8V (1.7V ~ 1.95V)
- Organization
- Memory Cell Array: (256M + 8M) x 8bit
- Data Register: (2K + 64) x 8bit x16
- Memory Cell Array: (128M + 4M) x 16bit
- Data Register: (1K + 32) x 16bit
- Automatic Program and Erase x8
- Page Program: (2K + 64) byte
- Block Erase: (128K + 4K) byte x16
- Page Program: (1K + 32) word
