Datasheet4U Logo Datasheet4U.com

F59D2G81XA-45BG2B - 2 Gbit (256M x 8) 1.8V NAND Flash Memory

General Description

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data.

Key Features

  • Voltage Supply: 1.8V (1.7V to 1.95V).
  • Open NAND Flash Interface (ONFI) 1.0-compliant1.
  • Single-level cell (SLC) technology.
  • Organization.
  • Page size: 2176 bytes (2048 + 128 bytes).
  • Block size: 64 pages (128K + 8K bytes).
  • Plane size: 2 planes x 1024 blocks per plane.
  • Device size: 2048 blocks.
  • Asynchronous I/O performance.
  • tRC/ tWC: 30ns.
  • Array performance.
  • Read page: 30us.
  • Program page: 200us (TYP).

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT F59D2G81XA (2B) Flash FEATURES  Voltage Supply: 1.8V (1.7V to 1.95V)  Open NAND Flash Interface (ONFI) 1.0-compliant1  Single-level cell (SLC) technology  Organization – Page size: 2176 bytes (2048 + 128 bytes) – Block size: 64 pages (128K + 8K bytes) – Plane size: 2 planes x 1024 blocks per plane – Device size: 2048 blocks  Asynchronous I/O performance – tRC/ tWC: 30ns  Array performance – Read page: 30us – Program page: 200us (TYP) – Erase block: 2ms(TYP)  Command set: ONFI NAND Flash Protocol  Advanced command set – Program page cache mode – Read page cache mode – One-time programmable (OTP) mode – Programmable drive strength – Two-plane commands (Available with ECC off only) – Read unique ID – Internal data move 2 Gbit (256M x 8) 1.