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F59D2G81XA-45BG2B

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

F59D2G81XA-45BG2B datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

F59D2G81XA-45BG2B datasheet preview

F59D2G81XA-45BG2B Datasheet Details

Part number F59D2G81XA-45BG2B
Datasheet F59D2G81XA-45BG2B-ESMT.pdf
File Size 2.90 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 2 Gbit (256M x 8) 1.8V NAND Flash Memory
F59D2G81XA-45BG2B page 2 F59D2G81XA-45BG2B page 3

F59D2G81XA-45BG2B Overview

NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer mands, address, and data. There are five control signals used to implement the asynchronous data interface:.

F59D2G81XA-45BG2B Key Features

  • Voltage Supply: 1.8V (1.7V to 1.95V)
  • Open NAND Flash Interface (ONFI) 1.0-pliant1
  • Single-level cell (SLC) technology
  • Organization
  • Page size: 2176 bytes (2048 + 128 bytes)
  • Block size: 64 pages (128K + 8K bytes)
  • Plane size: 2 planes x 1024 blocks per plane
  • Device size: 2048 blocks
  • Asynchronous I/O performance
  • tRC/ tWC: 30ns
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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