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F59D2G81XA-45BG2B Datasheet 2 Gbit (256m X 8) 1.8v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT F59D2G81XA (2B) Flash.

General Description

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer mands, address, and data.

There are five control signals used to i

Key Features

  • Voltage Supply: 1.8V (1.7V to 1.95V).
  • Open NAND Flash Interface (ONFI) 1.0-compliant1.
  • Single-level cell (SLC) technology.
  • Organization.
  • Page size: 2176 bytes (2048 + 128 bytes).
  • Block size: 64 pages (128K + 8K bytes).
  • Plane size: 2 planes x 1024 blocks per plane.
  • Device size: 2048 blocks.
  • Asynchronous I/O performance.
  • tRC/ tWC: 30ns.
  • Array performance.
  • Read page: 30us.
  • Program page: 200us (TYP).

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D2G81KA 1.8V NAND Flash Memory
F59D2G81KA-45BCG2N 1.8V NAND Flash Memory
F59D2G81KA-45BG2N 1.8V NAND Flash Memory
F59D2G81KA-45TG2N 1.8V NAND Flash Memory
F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB 1.8V NAND Flash Memory
F59D1G161MB-45BG2M 1.8V NAND Flash Memory

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