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F59D2G81KA-45BG2N Datasheet 1.8v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes).

The device is a memory device which utilizes the I/O pins for both address and data input/output as well as mand inputs.

Key Features

  • Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V).
  • Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block Size: 64Pages = (128K + 8K) bytes ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (2K + 128) bytes ­ Block Erase: (128K + 8K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 45ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us (Max. ) ­ Block Erase Time: 3.5ms (Typ. ) 10ms (Max. ).

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D2G81KA-45BCG2N 1.8V NAND Flash Memory
F59D2G81KA-45TG2N 1.8V NAND Flash Memory
F59D2G81KA 1.8V NAND Flash Memory
F59D2G81XA-45BG2B 2 Gbit (256M x 8) 1.8V NAND Flash Memory
F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB 1.8V NAND Flash Memory
F59D1G161MB-45BG2M 1.8V NAND Flash Memory

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