F59D2G81KA-45BG2N
F59D2G81KA-45BG2N is 1.8V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the F59D2G81KA comparator family.
- Part of the F59D2G81KA comparator family.
ESMT
Flash
Features
- Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V)
- Organization Page Size: (2K + 128) bytes Data Register: (2K + 128) bytes Block Size: 64Pages = (128K + 8K) bytes Number of Block per Die (LUN)= 2048
- Automatic Program and Erase Page Program: (2K + 128) bytes Block Erase: (128K + 8K) bytes
- Page Read Operation Random Read: 25us (Max.) Read Cycle: 45ns
- Write Cycle Time Page Program Time: 400us (Typ.) 700us (Max.) Block Erase Time: 3.5ms (Typ.) 10ms (Max.)
F59D2G81KA (2N)
2 Gbit (256M x 8) 1.8V NAND Flash Memory
- 1bit/cell
- mand/Address/Data Multiplexed DQ Port
- Hardware Data Protection
Program/Erase Lockout During Power Transitions
- Reliable...
