F59D2G81KA-45TG2N - 1.8V NAND Flash Memory

This page provides the datasheet information for the F59D2G81KA-45TG2N, a member of the F59D2G81KA 1.8V NAND Flash Memory family.

Product Overview

ESMT

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Datasheet Details

Part number	F59D2G81KA-45TG2N
Manufacturer	ESMT
File Size	1.06 MB
Description	1.8V NAND Flash Memory
Datasheet	F59D2G81KA-45TG2N Datasheet
Additional preview pages of the F59D2G81KA-45TG2N datasheet.

F59D2G81KA-45TG2N Product details

Description

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes).

Features

Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V).
Organization Page Size: (2K + 128) bytes Data Register: (2K + 128) bytes Block Size: 64Pages = (128K + 8K) bytes Number of Block per Die (LUN)= 2048.
Automatic Program and Erase Page Program: (2K + 128) bytes Block Erase: (128K + 8K) bytes.
Page Read Operation Random Read: 25us (Max. ) Read Cycle: 45ns.
Write Cycle Time Page Program Time: 400us (Typ. ) 700us (Max. ) Block Erase Time: 3.5ms (Typ. ) 10ms (Max. ).

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Published: Aug 19, 2025 |