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F59D1G161MB Datasheet 1.8v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The Device is a 128Mx

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max. ) - Serial Access: 45ns (.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Elite Semiconductor Logo F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D1G161MB-45BG2M 1.8V NAND Flash Memory
F59D1G161MB-45TG2M 1.8V NAND Flash Memory
F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BCG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81MA-45BCG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

F59D1G161MB Distributor