• Part: F59D4G161A
  • Description: 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.54 MB
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Elite Semiconductor Microelectronics Technology
F59D4G161A
F59D4G161A is 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the F59D4G81A comparator family.
ESMT Flash Features - Voltage Supply: 1.8V (1.7V ~ 1.95V) - Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit - Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word - Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) - Memory Cell: 1bit/Memory Cell - Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.) F59D4G81A / F59D4G161A 4 Gbit (512M x 8...