F59D4G81A
F59D4G81A is 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
ESMT
Flash
Features
- Voltage Supply: 1.8V (1.7V ~ 1.95V)
- Organization x8:
- Memory Cell Array: (512M + 8M) x 8bit
- Data Register: (2K + 64) x 8bit x16:
- Memory Cell Array: (256M + 4M) x 16bit
- Data Register: (1K + 32) x 16bit
- Automatic Program and Erase x8:
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte x16:
- Page Program: (1K + 32) Word
- Block Erase: (64K + 2K) Word
- Page Read Operation
- Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16)
- Random Read: 25us (Max.)
- Serial Access: 45ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Program time: 350us (Typ.)
- Block Erase time: 3.5ms (Typ.)
F59D4G81A / F59D4G161A
4 Gbit (512M x 8...
