F59D4G81KA Datasheet | Elite Semiconductor Microelectronics Technology

ESMT Flash Features - Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V) - Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048 - Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes - Page Read Operation ­ Random Read: 25us (Max.) ­ Read Cycle: 45ns - Write Cycle Time ­ Page Program Time: 400us (Typ.) 700us (Max.) ­ Block Erase Time: 3.5 ms (Typ.) 10ms (Max.) F59D4G81KA (2R) 4 Gbit (512M x 8) 1.8V NAND Flash Memory - 1bit/cell - mand/Address/Data Multiplexed DQ Port - Hardware Data Protection ­ Program/Erase Lockout During...