Part F59D4G81KA
Description 4-Gbit 1.8V NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 1.32 MB
Elite Semiconductor Microelectronics Technology

F59D4G81KA Overview

Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Key Features

  • Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V)
  • Organization ­ Page Size: (4K +
  • bytes ­ Data Register: (4K +
  • bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048
  • Automatic Program and Erase ­ Page Program: (4K +